general purpose transistor npn silicon maximum ratings rating symbol value unit collectoremitter voltage v ceo 45 vdc collectorbase voltage v cbo 50 vdc emitterbase voltage v ebo 5.0 vdc collector current e continuous i c 100 madc thermal characteristics characteristic symbol max unit total device dissipation fr5 board (1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction to ambient r ja 556 c/w total device dissipation alumina substrate, (2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t stg 55 to +150 c device marking BCW72LT1 = k2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectoremitter breakdown voltage (i c = 2.0 madc, v eb = 0) v (br)ceo 45 e e vdc collectoremitter breakdown voltage (i c = 2.0 madc, v eb = 0) v (br)ces 45 e e vdc collectorbase breakdown voltage (i c = 10 adc, i e = 0) v (br)cbo 50 e e vdc emitterbase breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 5.0 e e vdc collector cutoff current (v cb = 20 vdc, i e = 0) (v cb = 20 vdc, i e = 0, t a = 100 c) i cbo e e e e 100 10 nadc adc 1. fr5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in. 99.5% alumina. on semiconductor ? semiconductor components industries, llc, 2001 march, 2001 rev. 1 1 publication order number: BCW72LT1/d BCW72LT1 1 2 3 case 31808, style 6 sot23 (to236ab) collector 3 1 base 2 emitter
BCW72LT1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit on characteristics dc current gain (i c = 2.0 madc, v ce = 5.0 vdc) h fe 200 e 450 e collectoremitter saturation voltage (i c = 10 madc, i b = 0.5 madc) (i c = 50 madc, i b = 2.5 madc) v ce(sat) e e e 0.21 0.25 e vdc baseemitter saturation voltage (i c = 50 madc, i b = 2.5 madc) v be(sat) e 0.85 e vdc baseemitter on voltage (i c = 2.0 madc, v ce = 5.0 vdc) v be(on) 0.6 e 0.75 vdc smallsignal characteristics currentgain e bandwidth product (i c = 10 madc, v ce = 5.0 vdc, f = 100 mhz) f t e 300 e mhz output capacitance (i e = 0, v cb = 10 vdc, f = 1.0 mhz) c obo e e 4.0 pf input capacitance (i e = 0, v cb = 10 vdc, f = 1.0 mhz) c ibo e 9.0 e pf noise figure (i c = 0.2 madc, v ce = 5.0 vdc, r s = 2.0 k w , f = 1.0 khz, bw = 200 hz) nf e e 10 db figure 1. turnon time figure 2. turnoff time equivalent switching time test circuits *total shunt capacitance of test jig and connectors 10 k +3.0 v 275 c s < 4.0 pf* 10 k +3.0 v 275 c s < 4.0 pf* 1n916 300 ns duty cycle = 2% +10.9 v -0.5 v <1.0 ns 10 < t 1 < 500 m s duty cycle = 2% +10.9 v 0 -9.1 v <1.0 ns t 1 typical noise characteristics (v ce = 5.0 vdc, t a = 25 c) figure 3. noise voltage f, frequency (hz) 5.0 7.0 10 20 3.0 figure 4. noise current f, frequency (hz) 2.0 10 20 50 100 200 500 1k 2k 5k 10k 100 50 20 10 5.0 2.0 1.0 0.5 0.2 0.1 bandwidth = 1.0 hz r s = 0 i c = 1.0 ma 100 m a e n , noise voltage (nv) i n , noise current (pa) 30 m a bandwidth = 1.0 hz r s ? 10 m a 300 m a i c = 1.0 ma 300 m a 100 m a 30 m a 10 m a 10 20 50 100 200 500 1k 2k 5k 10k
BCW72LT1 http://onsemi.com 3 noise figure contours (v ce = 5.0 vdc, t a = 25 c) figure 5. narrow band, 100 hz i c , collector current ( m a) 500k figure 6. narrow band, 1.0 khz i c , collector current ( m a) 10 2.0 db bandwidth = 1.0 hz r s , source resistance (ohms) r s , source resistance (ohms) figure 7. wideband i c , collector current ( m a) 10 10 hz to 15.7 khz r s , source resistance (ohms) noise figure is defined as: nf 20 log 10 e n 2 4ktr s i n 2 r s 2 4ktr s 1 2 = noise voltage of the transistor referred to the input. (figure 3) = noise current of the transistor referred to the input. (figure 4) = boltzman's constant (1.38 x 10 23 j/ k) = temperature of the source resistance ( k) = source resistance (ohms) e n i n k t r s 3.0 db 4.0 db 6.0 db 10 db 50 100 200 500 1k 10k 5k 20k 50k 100k 200k 2k 20 30 50 70 100 200 300 500 700 1k 10 20 30 50 70 100 200 300 500 700 1k 500k 100 200 500 1k 10k 5k 20k 50k 100k 200k 2k 1m 500k 50 100 200 500 1k 10k 5k 20k 50k 100k 200k 2k 20 30 50 70 100 200 300 500 700 1k bandwidth = 1.0 hz 1.0 db 2.0 db 3.0 db 5.0 db 8.0 db 1.0 db 2.0 db 3.0 db 5.0 db 8.0 db
BCW72LT1 http://onsemi.com 4 typical static characteristics figure 8. dc current gain i c , collector current (ma) 400 0.004 h , dc current gain fe t j = 125 c -55 c 25 c v ce = 1.0 v v ce = 10 v figure 9. collector saturation region i c , collector current (ma) 1.4 figure 10. collector characteristics i c , collector current (ma) v, voltage (volts) 1.0 2.0 5.0 10 20 50 1.6 100 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 1.0 v * vc for v ce(sat) vb for v be 0.1 0.2 0.5 figure 11. aono voltages i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0 v ce , collector-emitter voltage (volts) 0.002 t j = 25 c i c = 1.0 ma 10 ma 100 ma figure 12. temperature coefficients 50 ma v ce , collector-emitter voltage (volts) 40 60 80 100 20 0 0 i c , collector current (ma) t a = 25 c pulse width = 300 m s duty cycle 2.0% i b = 500 m a 400 m a 300 m a 200 m a 100 m a *applies for i c /i b h fe /2 25 c to 125 c -55 c to 25 c 25 c to 125 c -55 c to 25 c 40 60 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5.0 10 15 20 25 30 35 40 1.2 1.0 0.8 0.6 0.4 0.2 0 -2.4 0.8 0 -1.6 -0.8 1.0 2.0 5.0 10 20 50 10 0 0.1 0.2 0.5 200 100 80 v , temperature coefficients (mv/ c) q
BCW72LT1 http://onsemi.com 5 typical dynamic characteristics c, capacitance (pf) figure 13. turnon time i c , collector current (ma) 300 figure 14. turnoff time i c , collector current (ma) 2.0 5.0 10 20 30 50 1000 figure 15. currentgain e bandwidth product i c , collector current (ma) figure 16. capacitance v r , reverse voltage (volts) figure 17. input impedance i c , collector current (ma) figure 18. output admittance i c , collector current (ma) 3.0 1.0 500 0.5 10 t, time (ns) t, time (ns) f, current-gain bandwidth product (mhz) t h , output admittance ( mhos) oe h ie , input impedance (k ) w 3.0 5.0 7.0 10 20 30 50 70 100 200 7.0 70 100 v cc = 3.0 v i c /i b = 10 t j = 25 c t d @ v be(off) = 0.5 vdc t r 10 20 30 50 70 100 200 300 500 700 2.0 5.0 10 20 30 50 3.0 1.0 7.0 70 100 v cc = 3.0 v i c /i b = 10 i b1 = i b2 t j = 25 c t s t f 50 70 100 200 300 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 t j = 25 c f = 100 mhz v ce = 20 v 5.0 v 1.0 2.0 3.0 5.0 7.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 0.05 t j = 25 c f = 1.0 mhz c ib c ob 2.0 5.0 10 20 50 1.0 0.2 100 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.1 0.2 0.5 h fe 200 @ i c = 1.0 ma v ce = 10 vdc f = 1.0 khz t a = 25 c 2.0 5.0 10 20 50 1.0 2.0 100 3.0 5.0 7.0 10 20 30 50 70 100 200 0.1 0.2 0.5 v ce = 10 vdc f = 1.0 khz t a = 25 c h fe 200 @ i c = 1.0 ma
BCW72LT1 http://onsemi.com 6 figure 19. thermal response t, time (ms) 1.0 0.01 r(t) transient thermal resistance (normalized) 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse duty cycle, d = t 1 /t 2 d curves apply for power pulse train shown read time at t 1 (see an569) z q ja(t) = r(t) ? r q ja t j(pk) t a = p (pk) z q ja(t) t 1 t 2 p (pk) figure 19a figure 19a. t j , junction temperature ( c) 10 4 -40 i c , collector current (na) figure 20. v ce , collector-emitter voltage (volts) 400 2.0 i c , collector current (ma) design note: use of thermal response data a train of periodical power pulses can be represented by the model as shown in figure 19a. using the model and the device thermal response the normalized effective transient thermal resistance of figure 19 was calculated for various duty cycles. to find z q ja(t) , multiply the value obtained from figure 19 by the steady state value r q ja . example: the mps3904 is dissipating 2.0 watts peak under the following conditions: t 1 = 1.0 ms, t 2 = 5.0 ms. (d = 0.2) using figure 19 at a pulse width of 1.0 ms and d = 0.2, the reading of r(t) is 0.22. the peak rise in junction temperature is therefore d t = r(t) x p (pk) x r q ja = 0.22 x 2.0 x 200 = 88 c. for more information, see an569. the safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation. collector load lines for specific circuits must fall below the limits indicated by the applicable curve. the data of figure 20 is based upon t j(pk) = 150 c; t c or t a is variable depending upon conditions. pulse curves are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 19. at high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10 -2 10 -1 10 0 10 1 10 2 10 3 -20 0 +20 +40 +60 +80 +100 +120 +140 +160 v cc = 30 vdc i ceo i cbo and i cex @ v be(off) = 3.0 vdc t a = 25 c current limit thermal limit second breakdown limit 1.0 ms 10 m s t c = 25 c 1.0 s dc dc 4.0 6.0 10 20 40 60 100 200 4.0 6.0 8.0 10 20 40 t j = 150 c 100 m s
BCW72LT1 http://onsemi.com 7 information for using the sot23 surface mount package minimum recommended footprint for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. with the correct pad geometry, the packages will self align when subjected to a solder reflow process. sot23 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 sot23 power dissipation the power dissipation of the sot23 is a function of the pad size. this can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. power dissipation for a surface mount device is determined by t j(max) , the maximum rated junction temperature of the die, r q ja , the thermal resistance from the device junction to ambient, and the operating temperature, t a . using the values provided on the data sheet for the sot23 package, p d can be calculated as follows: p d = t j(max) t a r q ja the values for the equation are found in the maximum ratings table on the data sheet. substituting these values into the equation for an ambient temperature t a of 25 c, one can calculate the power dissipation of the device which in this case is 225 milliwatts. p d = 150 c 25 c 556 c/w = 225 milliwatts the 556 c/w for the sot23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. there are other alternatives to achieving higher power dissipation from the sot23 package. another alternative would be to use a ceramic substrate or an aluminum core board such as thermal clad ? . using a board material such as thermal clad, an aluminum core board, the power dissipation can be doubled using the same footprint. soldering precautions the melting temperature of solder is higher than the rated temperature of the device. when the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. ? always preheat the device. ? the delta temperature between the preheat and soldering should be 100 c or less.* ? when preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. when using infrared heating with the reflow soldering method, the difference shall be a maximum of 10 c. ? the soldering temperature and time shall not exceed 260 c for more than 10 seconds. ? when shifting from preheating to soldering, the maximum temperature gradient shall be 5 c or less. ? after soldering has been completed, the device should be allowed to cool naturally for at least three minutes. gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. ? mechanical stress or shock should not be applied during cooling. * soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
BCW72LT1 http://onsemi.com 8 package dimensions case 31808 issue af sot23 (to236) d j k l a c b s h g v 3 1 2 dim a min max min max millimeters 0.1102 0.1197 2.80 3.04 inches b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. style 6: pin 1. base 2. emitter 3. collector on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. BCW72LT1/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland thermal clad is a trademark of the bergquist company
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